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We report a characterization of the spatial resolution of terahertz (THz) apertureless near-field imaging of metal lines deeply buried beneath a silicon dioxide layer. We find a good resolution for edge contrast, even in the case where the capping layer is considerably thicker than the tip radius. We find that contrast and resolution depend on demodulation frequency, thickness of the capping layer, and radius of the tip. Furthermore, we observe a distinct dependence of the contrast on the direction of the incoming radiation, in both experiments and simulations. Characterization of buried features can be a valuable tool in non-contact failure analysis of semiconductor devices. 

Abstract The coupling of terahertz optical techniques to scattering-type scanning near-field microscopy (s-SNOM) has recently emerged as a valuable new paradigm for probing the properties of semiconductors and other materials on the nanoscale. Researchers have demonstrated a family of related techniques, including terahertz nanoscopy (elastic scattering, based on linear optics), time-resolved methods, and nanoscale terahertz emission spectroscopy. However, as with nearly all examples of s-SNOM since the technique’s inception in the mid-1990s, the wavelength of the optical source coupled to the near-field tip is long, usually at energies of 2.5 eV or less. Challenges in coupling of shorter wavelengths (i.e., blue light) to the nanotip has greatly inhibited the study of nanoscale phenomena in wide bandgap materials such as Si and GaN. Here, we describe the first experimental demonstration of s-SNOM using blue light. With femtosecond pulses at 410 nm, we generate terahertz pulses directly from bulk silicon, spatially resolved with nanoscale resolution, and show that these signals provide spectroscopic information that cannot be obtained using near-infrared excitation. We develop a new theoretical framework to account for this nonlinear interaction, which enables accurate extraction of material parameters. This work establishes a new realm of possibilities for the study of technologically relevant wide-bandgap materials using s-SNOM methods.